QSB363YR
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
SENSOR PHOTO 940NM TOP VIEW 2SMD
SENSOR PHOTO 940NM TOP VIEW 2SMD
Detaljerad specifikation
Detaljerad specifikation
Fototransistorer 940nm Toppvy 2-SMD, Yoke Bend
Fototransistorer 940nm Toppvy 2-SMD, Yoke Bend
Beskrivning (eng)
Beskrivning (eng)
The QSB363YR is a subminiature NPN silicon phototransistor designed for infrared applications, featuring a peak sensitivity wavelength of 940 nm. It is housed in a T−3/4 (2 mm) surface mount package with a medium wide beam angle of 24°. The device operates within a temperature range of -40 to +85 °C and has a collector-emitter voltage rating of 30 V.
The QSB363YR is a subminiature NPN silicon phototransistor designed for infrared applications, featuring a peak sensitivity wavelength of 940 nm. It is housed in a T−3/4 (2 mm) surface mount package with a medium wide beam angle of 24°. The device operates within a temperature range of -40 to +85 °C and has a collector-emitter voltage rating of 30 V.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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