PZT651T1G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 60V 2A SOT223
TRANS NPN 60V 2A SOT223
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 60 V 2 A 75 MHz 800 mW ytmonterad SOT-223 (TO-261)
Bipolär (BJT) Transistor NPN 60 V 2 A 75 MHz 800 mW ytmonterad SOT-223 (TO-261)
Beskrivning (eng)
Beskrivning (eng)
The PZT651T1G is an NPN silicon planar epitaxial transistor designed for medium power applications. It features a collector-emitter voltage of 60 V, a collector current of 2 A, and a total power dissipation of 800 mW. Housed in a SOT-223 package, it offers improved thermal conduction and is suitable for wave or reflow soldering.
The PZT651T1G is an NPN silicon planar epitaxial transistor designed for medium power applications. It features a collector-emitter voltage of 60 V, a collector current of 2 A, and a total power dissipation of 800 mW. Housed in a SOT-223 package, it offers improved thermal conduction and is suitable for wave or reflow soldering.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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