PN2222ABU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 40V 1A TO92-3
TRANS NPN 40V 1A TO92-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 40 V 1 A 300MHz 625 mW Genomgående hål TO-92-3
Bipolär (BJT) Transistor NPN 40 V 1 A 300MHz 625 mW Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The PN2222ABU is a general-purpose NPN bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It features a collector-emitter voltage (VCEO) of 40 V, a collector current (IC) of 1 A, and a maximum power dissipation of 625 mW. With a current gain bandwidth product of 300 MHz, it operates effectively in various electronic circuits.
The PN2222ABU is a general-purpose NPN bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It features a collector-emitter voltage (VCEO) of 40 V, a collector current (IC) of 1 A, and a maximum power dissipation of 625 mW. With a current gain bandwidth product of 300 MHz, it operates effectively in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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