PD55008-E
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 12.5V POWERSO10
RF MOSFET LDMOS 12.5V POWERSO10
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 12,5 V 150 mA 500MHz 17dB 8W 10-PowerSO
RF Mosfet 12,5 V 150 mA 500MHz 17dB 8W 10-PowerSO
Beskrivning (eng)
Beskrivning (eng)
The PD55008-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. It operates at 12.5 V, delivering 8 W output power with 17 dB gain at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
The PD55008-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. It operates at 12.5 V, delivering 8 W output power with 17 dB gain at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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