PD55003L-E
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 12.5V POWERFLAT
RF MOSFET LDMOS 12.5V POWERFLAT
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 12,5 V 50 mA 500MHz 19dB 3W PowerFLAT™ (5x5)
RF Mosfet 12,5 V 50 mA 500MHz 19dB 3W PowerFLAT™ (5x5)
Beskrivning (eng)
Beskrivning (eng)
The PD55003L-E is an N-channel enhancement-mode RF power transistor designed for high gain and broadband applications. Operating at 12.5 V, it delivers 3 W output power with 19 dB gain at 500 MHz. Its innovative PowerFLAT™ package ensures excellent thermal stability and reliability, making it suitable for commercial and industrial use.
The PD55003L-E is an N-channel enhancement-mode RF power transistor designed for high gain and broadband applications. Operating at 12.5 V, it delivers 3 W output power with 19 dB gain at 500 MHz. Its innovative PowerFLAT™ package ensures excellent thermal stability and reliability, making it suitable for commercial and industrial use.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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