PD55003-E
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 12.5V POWERSO10
RF MOSFET LDMOS 12.5V POWERSO10
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 12,5 V 50 mA 500MHz 17dB 3W 10-PowerSO
RF Mosfet 12,5 V 50 mA 500MHz 17dB 3W 10-PowerSO
Beskrivning (eng)
Beskrivning (eng)
The PD55003-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. It operates at 12.5 V, delivering 3 W output power with 17 dB gain at 500 MHz. The device features excellent thermal stability and reliability, optimized for RF performance in a PowerSO-10RF package.
The PD55003-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. It operates at 12.5 V, delivering 3 W output power with 17 dB gain at 500 MHz. The device features excellent thermal stability and reliability, optimized for RF performance in a PowerSO-10RF package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Christian eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K