PBSS5630PA,115
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA PBSS5630PA - SMALL SIGN
NEXPERIA PBSS5630PA - SMALL SIGN
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 30 V 6 A 80MHz 2.1 W Ytmonterad 3-HUSON (2x2)
Bipolär (BJT) Transistor PNP 30 V 6 A 80MHz 2.1 W Ytmonterad 3-HUSON (2x2)
Beskrivning (eng)
Beskrivning (eng)
The NEXPERIA PBSS5630PA is a high-performance PNP bipolar junction transistor (BJT) designed for efficient switching and amplification applications. With a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 6 A, this transistor operates effectively at frequencies up to 80 MHz. It has a power dissipation capability of 2.1 W, making it suitable for various electronic circuits. The device is housed in a compact 3-HUSON (2x2) surface mount package, facilitating easy integration into space-constrained designs.
The NEXPERIA PBSS5630PA is a high-performance PNP bipolar junction transistor (BJT) designed for efficient switching and amplification applications. With a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 6 A, this transistor operates effectively at frequencies up to 80 MHz. It has a power dissipation capability of 2.1 W, making it suitable for various electronic circuits. The device is housed in a compact 3-HUSON (2x2) surface mount package, facilitating easy integration into space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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