PBSS5320D,115
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA PBSS5320D - SMALL SIGNA
NEXPERIA PBSS5320D - SMALL SIGNA
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 20 V 3 A 100MHz 750 mW ytmonterad 6-TSOP
Bipolär (BJT) Transistor PNP 20 V 3 A 100MHz 750 mW ytmonterad 6-TSOP
Beskrivning (eng)
Beskrivning (eng)
The NXP Semiconductors PBSS5320D is a low VCEsat PNP bipolar transistor designed for high current applications. It features a maximum collector-emitter voltage of -20 V, a collector current rating of -3 A, and a transition frequency of 100 MHz. The device is housed in a compact SOT457 (SC-74) surface mount package, providing efficient thermal performance with a total power dissipation of up to 750 mW. Its low saturation voltage and high reliability make it suitable for various applications.
The NXP Semiconductors PBSS5320D is a low VCEsat PNP bipolar transistor designed for high current applications. It features a maximum collector-emitter voltage of -20 V, a collector current rating of -3 A, and a transition frequency of 100 MHz. The device is housed in a compact SOT457 (SC-74) surface mount package, providing efficient thermal performance with a total power dissipation of up to 750 mW. Its low saturation voltage and high reliability make it suitable for various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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