PBSS4260QAZ
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NOW NEXPERIA PBSS4260QA - SMALL
NOW NEXPERIA PBSS4260QA - SMALL
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 60 V 2 A 180 MHz 325 mW ytmonterad DFN1010D-3
Bipolär (BJT) Transistor NPN 60 V 2 A 180 MHz 325 mW ytmonterad DFN1010D-3
Beskrivning (eng)
Beskrivning (eng)
The NXP Semiconductors PBSS4260QAZ is a small NPN bipolar junction transistor (BJT) designed for high-frequency applications. It operates at a maximum collector-emitter voltage of 60 V and can handle a collector current of up to 2 A, making it suitable for various power management tasks. With a transition frequency of 180 MHz and a power dissipation of 325 mW, this surface-mounted device is ideal for compact circuit designs. Packaged in a DFN1010D-3 format, it ensures efficient thermal performance and space-saving integration in electronic systems.
The NXP Semiconductors PBSS4260QAZ is a small NPN bipolar junction transistor (BJT) designed for high-frequency applications. It operates at a maximum collector-emitter voltage of 60 V and can handle a collector current of up to 2 A, making it suitable for various power management tasks. With a transition frequency of 180 MHz and a power dissipation of 325 mW, this surface-mounted device is ideal for compact circuit designs. Packaged in a DFN1010D-3 format, it ensures efficient thermal performance and space-saving integration in electronic systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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