PBSS304PD,115
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA PBSS304PD - SMALL SIGNA
NEXPERIA PBSS304PD - SMALL SIGNA
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 80 V 1 A 110MHz 1.1 W ytmonterad 6-TSOP
Bipolar (BJT) Transistor PNP 80 V 1 A 110MHz 1.1 W ytmonterad 6-TSOP
Beskrivning (eng)
Beskrivning (eng)
The NXP Semiconductors PBSS304PD is a PNP low VCEsat (BISS) transistor designed for small signal applications. It features a collector-emitter voltage of 80 V, a collector current of 3 A, and a power dissipation of 1.1 W. This surface-mounted device (SMD) operates at frequencies up to 110 MHz, making it suitable for high-voltage DC-to-DC conversion and motor control applications.
The NXP Semiconductors PBSS304PD is a PNP low VCEsat (BISS) transistor designed for small signal applications. It features a collector-emitter voltage of 80 V, a collector current of 3 A, and a power dissipation of 1.1 W. This surface-mounted device (SMD) operates at frequencies up to 110 MHz, making it suitable for high-voltage DC-to-DC conversion and motor control applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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