PBSS301ND,115
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA PBSS301ND - SMALL SIGNA
NEXPERIA PBSS301ND - SMALL SIGNA
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 20 V 4 A 100MHz 1.1 W ytmonterad 6-TSOP
Bipolär (BJT) Transistor NPN 20 V 4 A 100MHz 1.1 W ytmonterad 6-TSOP
Beskrivning (eng)
Beskrivning (eng)
The Nexperia PBSS301ND is a low VCEsat NPN bipolar transistor designed for small signal applications. It features a collector-emitter voltage of 20 V, a continuous collector current of 4 A, and a peak current capability of 15 A. With a collector-emitter saturation resistance (RCEsat) of 50 to 70 mΩ, it ensures high efficiency and minimal heat generation, making it suitable for power management, charging circuits, and MOSFET gate driving.
The Nexperia PBSS301ND is a low VCEsat NPN bipolar transistor designed for small signal applications. It features a collector-emitter voltage of 20 V, a continuous collector current of 4 A, and a peak current capability of 15 A. With a collector-emitter saturation resistance (RCEsat) of 50 to 70 mΩ, it ensures high efficiency and minimal heat generation, making it suitable for power management, charging circuits, and MOSFET gate driving.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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