PBSS2515M,315
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 15V 0.5A SOT883
TRANS NPN 15V 0.5A SOT883
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 15 V 500 mA 420 MHz 430 mW ytmonterad SOT-883
Bipolär (BJT) Transistor NPN 15 V 500 mA 420 MHz 430 mW ytmonterad SOT-883
Beskrivning (eng)
Beskrivning (eng)
The PBSS2515M is a low VCEsat NPN bipolar transistor designed for applications requiring high efficiency and low heat generation. It operates at a collector-emitter voltage of 15 V and supports a continuous collector current of 500 mA, with a peak current capability of 1 A. The device features a low collector-emitter saturation voltage (VCEsat) and is housed in a compact SOT-883 surface mount package, making it suitable for space-constrained designs.
The PBSS2515M is a low VCEsat NPN bipolar transistor designed for applications requiring high efficiency and low heat generation. It operates at a collector-emitter voltage of 15 V and supports a continuous collector current of 500 mA, with a peak current capability of 1 A. The device features a low collector-emitter saturation voltage (VCEsat) and is housed in a compact SOT-883 surface mount package, making it suitable for space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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