PBRN123ET-QR
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS NPN 40V TO236AB
TRANS PREBIAS NPN 40V TO236AB
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW ytmonterad TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The PBRN123ET-Q is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage of 40 V and supports an output current of 600 mA. The device features built-in bias resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ) and offers low collector-emitter saturation voltage (VCEsat), making it suitable for automotive and industrial applications.
The PBRN123ET-Q is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage of 40 V and supports an output current of 600 mA. The device features built-in bias resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ) and offers low collector-emitter saturation voltage (VCEsat), making it suitable for automotive and industrial applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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