PBRN113ZT-QR
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS NPN 40V TO236AB
TRANS PREBIAS NPN 40V TO236AB
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW ytmonterad TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The PBRN113ZT-Q is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage (VCEO) of 40 V, with a maximum output current of 600 mA and power dissipation of 250 mW. The device features built-in bias resistors, simplifying circuit design and reducing component count.
The PBRN113ZT-Q is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage (VCEO) of 40 V, with a maximum output current of 600 mA and power dissipation of 250 mW. The device features built-in bias resistors, simplifying circuit design and reducing component count.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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