PBLS6003D,115
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS 1NPN 1PNP 6TSOP
TRANS PREBIAS 1NPN 1PNP 6TSOP
Detaljerad specifikation
Detaljerad specifikation
Förbise Bipoalär Transistor (BJT) 1 NPN Förbise, 1 PNP 50V, 60V 100mA, 700mA 185MHz 600mW Ytmonterad 6-TSOP
Förbise Bipoalär Transistor (BJT) 1 NPN Förbise, 1 PNP 50V, 60V 100mA, 700mA 185MHz 600mW Ytmonterad 6-TSOP
Beskrivning (eng)
Beskrivning (eng)
The PBLS6003D is a pre-biased bipolar transistor (BJT) featuring 1 NPN and 1 PNP configuration in a 6-TSOP surface mount package. It supports a collector-emitter voltage of 60V for PNP and 50V for NPN, with a maximum collector current of 1A and 100mA respectively. The device offers low VCEsat and low drive power requirements, making it suitable for space-constrained applications.
The PBLS6003D is a pre-biased bipolar transistor (BJT) featuring 1 NPN and 1 PNP configuration in a 6-TSOP surface mount package. It supports a collector-emitter voltage of 60V for PNP and 50V for NPN, with a maximum collector current of 1A and 100mA respectively. The device offers low VCEsat and low drive power requirements, making it suitable for space-constrained applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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