PBLS2022D,115
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS 1PNP 1PNP 6TSOP
TRANS PREBIAS 1PNP 1PNP 6TSOP
Detaljerad specifikation
Detaljerad specifikation
Förhandsbiaserad bipolär transistor (BJT) 1 PNP Förhandsbiaserad, 1 PNP 50V, 20V 100mA, 1.8A 130MHz 760mW Ytmonterad 6-TSOP
Förhandsbiaserad bipolär transistor (BJT) 1 PNP Förhandsbiaserad, 1 PNP 50V, 20V 100mA, 1.8A 130MHz 760mW Ytmonterad 6-TSOP
Beskrivning (eng)
Beskrivning (eng)
The PBLS2022D,115 is a pre-biased PNP bipolar transistor designed for low VCEsat applications. It features a collector-emitter voltage of -20V, a collector current of -1.8A, and a peak collector current of -3A. This surface-mounted device operates at a frequency of 130MHz and has a power dissipation of 760mW, making it suitable for various switching applications in compact designs.
The PBLS2022D,115 is a pre-biased PNP bipolar transistor designed for low VCEsat applications. It features a collector-emitter voltage of -20V, a collector current of -1.8A, and a peak collector current of -3A. This surface-mounted device operates at a frequency of 130MHz and has a power dissipation of 760mW, making it suitable for various switching applications in compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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