PBHV8540T-QR
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
PBHV8540T-Q/SOT23/TO-236AB
PBHV8540T-Q/SOT23/TO-236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor NPN 400 V 500 mA 30MHz 300 mW ytmonterad TO-236AB
Bipolar (BJT) Transistor NPN 400 V 500 mA 30MHz 300 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The PBHV8540T-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage of 400 V, a collector current of 500 mA, and a transition frequency of 30 MHz. This device is suitable for automotive and industrial applications, providing low VCEsat and high current gain.
The PBHV8540T-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage of 400 V, a collector current of 500 mA, and a transition frequency of 30 MHz. This device is suitable for automotive and industrial applications, providing low VCEsat and high current gain.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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