PBHV8515QAZ
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 150V 0.5A DFN1010D-3
TRANS NPN 150V 0.5A DFN1010D-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 150 V 500 mA 75 MHz 325 mW ytmonterad DFN1010D-3
Bipolär (BJT) Transistor NPN 150 V 500 mA 75 MHz 325 mW ytmonterad DFN1010D-3
Beskrivning (eng)
Beskrivning (eng)
The PBHV8515QAZ is a high-voltage NPN bipolar transistor designed for applications requiring low VCEsat. It operates at a collector-emitter voltage of 150 V and a collector current of 500 mA, with a transition frequency of 75 MHz. Packaged in a DFN1010D-3 surface mount configuration, it features a low profile of 0.37 mm, making it suitable for compact designs.
The PBHV8515QAZ is a high-voltage NPN bipolar transistor designed for applications requiring low VCEsat. It operates at a collector-emitter voltage of 150 V and a collector current of 500 mA, with a transition frequency of 75 MHz. Packaged in a DFN1010D-3 surface mount configuration, it features a low profile of 0.37 mm, making it suitable for compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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