PBHV8118T,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 180V 1A TO236AB
TRANS NPN 180V 1A TO236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 180 V 1 A 30MHz 300 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor NPN 180 V 1 A 30MHz 300 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The PBHV8118T is a high-voltage NPN bipolar transistor designed for applications requiring up to 180 V and 1 A. It features low collector-emitter saturation voltage (VCEsat) and high current gain (hFE) at elevated collector currents. This surface-mounted device (SMD) is suitable for LED drivers, automotive power management, and switch mode power supplies.
The PBHV8118T is a high-voltage NPN bipolar transistor designed for applications requiring up to 180 V and 1 A. It features low collector-emitter saturation voltage (VCEsat) and high current gain (hFE) at elevated collector currents. This surface-mounted device (SMD) is suitable for LED drivers, automotive power management, and switch mode power supplies.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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