NZT660
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
POWER BIPOLAR TRANSISTOR, 3A, 60
POWER BIPOLAR TRANSISTOR, 3A, 60
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 3 A 75MHz 2 W Ytmonterad SOT-223-4
Bipolär (BJT) Transistor PNP 60 V 3 A 75MHz 2 W Ytmonterad SOT-223-4
Beskrivning (eng)
Beskrivning (eng)
The NZT660 is a high-performance PNP bipolar junction transistor (BJT) designed for power applications. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 60 V, making it suitable for various switching and amplification tasks. With a transition frequency of 75 MHz and a power dissipation capability of 2 W, this surface-mounted device is housed in a compact SOT-223-4 package, ensuring efficient thermal management and space-saving design in electronic circuits. Ideal for use in power management and signal processing applications.
The NZT660 is a high-performance PNP bipolar junction transistor (BJT) designed for power applications. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 60 V, making it suitable for various switching and amplification tasks. With a transition frequency of 75 MHz and a power dissipation capability of 2 W, this surface-mounted device is housed in a compact SOT-223-4 package, ensuring efficient thermal management and space-saving design in electronic circuits. Ideal for use in power management and signal processing applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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