NXPSC12650B6J
Tillverkare
WEEN
Datablad
Datablad
Specifikation
Specifikation
DIODE SIL CARBIDE 650V 12A D2PAK
DIODE SIL CARBIDE 650V 12A D2PAK
Detaljerad specifikation
Detaljerad specifikation
Diode 650 V 12A ytmonterad D2PAK
Diode 650 V 12A ytmonterad D2PAK
Beskrivning (eng)
Beskrivning (eng)
The NXPSC12650B is a Silicon Carbide Schottky diode designed for high-frequency switched-mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 12 A. The diode is housed in a D2PAK package, ensuring high efficiency and reduced losses compared to traditional silicon diodes. It offers excellent thermal performance with a thermal resistance from junction to mounting base of 1.1 K/W, making it suitable for demanding applications.
The NXPSC12650B is a Silicon Carbide Schottky diode designed for high-frequency switched-mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 12 A. The diode is housed in a D2PAK package, ensuring high efficiency and reduced losses compared to traditional silicon diodes. It offers excellent thermal performance with a thermal resistance from junction to mounting base of 1.1 K/W, making it suitable for demanding applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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