NXPSC10650D6J
Tillverkare
WEEN
Datablad
Datablad
Specifikation
Specifikation
DIODE SIL CARBIDE 650V 10A DPAK
DIODE SIL CARBIDE 650V 10A DPAK
Detaljerad specifikation
Detaljerad specifikation
Diode 650 V 10A ytmonterad DPAK
Diode 650 V 10A ytmonterad DPAK
Beskrivning (eng)
Beskrivning (eng)
The NXPSC10650D6J is a Silicon Carbide Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 10 A, housed in a DPAK package. This diode offers high efficiency, fast reverse recovery, and reduced EMI, making it suitable for various applications.
The NXPSC10650D6J is a Silicon Carbide Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 10 A, housed in a DPAK package. This diode offers high efficiency, fast reverse recovery, and reduced EMI, making it suitable for various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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