NXPSC08650D6J
Tillverkare
WEEN
Datablad
Datablad
Specifikation
Specifikation
DIODE SIL CARBIDE 650V 8A DPAK
DIODE SIL CARBIDE 650V 8A DPAK
Detaljerad specifikation
Detaljerad specifikation
Diode 650 V 8A ytmonterad DPAK
Diode 650 V 8A ytmonterad DPAK
Beskrivning (eng)
Beskrivning (eng)
The NXPSC08650D is a Silicon Carbide Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 8 A. The device is housed in a DPAK package, offering high efficiency, reduced losses, and fast reverse recovery time, making it superior to traditional silicon diodes.
The NXPSC08650D is a Silicon Carbide Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 8 A. The device is housed in a DPAK package, offering high efficiency, reduced losses, and fast reverse recovery time, making it superior to traditional silicon diodes.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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