NTMD3P03R2G
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET 2P-CH 30V 2.34A 8SOIC
MOSFET 2P-CH 30V 2.34A 8SOIC
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 3.86A (Tj) 2W (Ta) ytmonterad 8-SOP
P-Kanal 30 V 3.86A (Tj) 2W (Ta) ytmonterad 8-SOP
Beskrivning (eng)
Beskrivning (eng)
The NTMD3P03R2G is a P-Channel MOSFET with a maximum Drain-to-Source Voltage of -30V and a continuous Drain Current of -3.86A. It features low RDS(on) values of 63mΩ at VGS=-10V and 90mΩ at VGS=-4.5V, making it suitable for high-efficiency applications. The device is housed in an 8-SOP surface mount package, optimizing board space.
The NTMD3P03R2G is a P-Channel MOSFET with a maximum Drain-to-Source Voltage of -30V and a continuous Drain Current of -3.86A. It features low RDS(on) values of 63mΩ at VGS=-10V and 90mΩ at VGS=-4.5V, making it suitable for high-efficiency applications. The device is housed in an 8-SOP surface mount package, optimizing board space.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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