NTD5867NLT4G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 20A DPAK
MOSFET N-CH 60V 20A DPAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 20A (Tc) 36W (Tc) ytmonterad DPAK
N-Kanal 60 V 20A (Tc) 36W (Tc) ytmonterad DPAK
Beskrivning (eng)
Beskrivning (eng)
The NTD5867NLT4G is an N-Channel MOSFET designed for high-performance applications, featuring a maximum Drain-to-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 20 A. It has a low RDS(on) of 39 mΩ at VGS = 10 V, ensuring efficient power management. The device is housed in a DPAK package and is RoHS compliant.
The NTD5867NLT4G is an N-Channel MOSFET designed for high-performance applications, featuring a maximum Drain-to-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 20 A. It has a low RDS(on) of 39 mΩ at VGS = 10 V, ensuring efficient power management. The device is housed in a DPAK package and is RoHS compliant.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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