NSS35200CF8T1G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 35V 2A CHIPFET
TRANS PNP 35V 2A CHIPFET
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 35 V 2 A 100 MHz 635 mW ytmonterad ChipFET™
Bipolär (BJT) Transistor PNP 35 V 2 A 100 MHz 635 mW ytmonterad ChipFET™
Beskrivning (eng)
Beskrivning (eng)
The NSS35200CF8T1G is a PNP bipolar transistor designed for low voltage, high-speed switching applications. It features a collector-emitter voltage of 35 V, a continuous collector current of 2 A, and a maximum power dissipation of 635 mW. This ChipFET™ device operates at frequencies up to 100 MHz, making it suitable for efficient energy control in portable electronics.
The NSS35200CF8T1G is a PNP bipolar transistor designed for low voltage, high-speed switching applications. It features a collector-emitter voltage of 35 V, a continuous collector current of 2 A, and a maximum power dissipation of 635 mW. This ChipFET™ device operates at frequencies up to 100 MHz, making it suitable for efficient energy control in portable electronics.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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