NP36P06KDG-E1-AY
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 60V 36A TO263
MOSFET P-CH 60V 36A TO263
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 60 V 36A (Tc) 1.8W (Ta), 56W (Tc) ytmonterad TO-263
P-Kanal 60 V 36A (Tc) 1.8W (Ta), 56W (Tc) ytmonterad TO-263
Beskrivning (eng)
Beskrivning (eng)
The NP36P06KDG-E1-AY is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a continuous Drain Current of -36A. It has a super low on-state resistance (RDS(on)) of 29.5 mΩ at VGS = -10V and ID = -18A, making it suitable for automotive applications. The device is housed in a TO-263 package and is AEC-Q101 qualified.
The NP36P06KDG-E1-AY is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a continuous Drain Current of -36A. It has a super low on-state resistance (RDS(on)) of 29.5 mΩ at VGS = -10V and ID = -18A, making it suitable for automotive applications. The device is housed in a TO-263 package and is AEC-Q101 qualified.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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