NP36P04KDG-E1-AY
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RENESAS
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 40V 36A TO263
MOSFET P-CH 40V 36A TO263
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 40 V 36A (Tc) 1.8W (Ta), 56W (Tc) ytmonterad TO-263
P-Kanal 40 V 36A (Tc) 1.8W (Ta), 56W (Tc) ytmonterad TO-263
Beskrivning (eng)
Beskrivning (eng)
The NP36P04KDG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -40V and a continuous Drain Current of -36A. It has a super low on-state resistance (RDS(on)) of 17.0 mΩ at VGS = -10V and ID = -18A, making it suitable for automotive applications. The device is housed in a surface-mounted TO-263 package and is AEC-Q101 qualified.
The NP36P04KDG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -40V and a continuous Drain Current of -36A. It has a super low on-state resistance (RDS(on)) of 17.0 mΩ at VGS = -10V and ID = -18A, making it suitable for automotive applications. The device is housed in a surface-mounted TO-263 package and is AEC-Q101 qualified.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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