NP33N06YDG-E1-AY
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 33A 8HSON
MOSFET N-CH 60V 33A 8HSON
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 33A (Tc) 1W (Ta), 97W (Tc) ytmonterad 8-HSON
N-Kanal 60 V 33A (Tc) 1W (Ta), 97W (Tc) ytmonterad 8-HSON
Beskrivning (eng)
Beskrivning (eng)
The NP33N06YDG is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 60 V and a Drain Current (ID) of 33 A. It has a low on-state resistance (RDS(on)) of 14 mΩ at VGS = 10 V and ID = 16.5 A, making it suitable for automotive applications. The device is housed in an 8-pin surface mount HSON package, ensuring compact design and efficient thermal performance.
The NP33N06YDG is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 60 V and a Drain Current (ID) of 33 A. It has a low on-state resistance (RDS(on)) of 14 mΩ at VGS = 10 V and ID = 16.5 A, making it suitable for automotive applications. The device is housed in an 8-pin surface mount HSON package, ensuring compact design and efficient thermal performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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