NJW21194G
Tillverkare
ON SEMICONDUCTOR
Specifikation
Specifikation
TRANS NPN 250V 16A TO3P-3L
TRANS NPN 250V 16A TO3P-3L
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Genomgående hål TO-3P-3L
Bipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Genomgående hål TO-3P-3L
Beskrivning (eng)
Beskrivning (eng)
The NJW21194G is a high-performance NPN bipolar junction transistor (BJT) designed for applications requiring high voltage and current handling capabilities. With a maximum collector-emitter voltage of 250V and a continuous collector current rating of 16A, this transistor is suitable for power amplification and switching applications. It operates at a frequency of up to 4MHz and can dissipate up to 200W of power. Packaged in a TO-3P-3L through-hole configuration, it offers robust thermal performance and ease of mounting in various electronic circuits.
The NJW21194G is a high-performance NPN bipolar junction transistor (BJT) designed for applications requiring high voltage and current handling capabilities. With a maximum collector-emitter voltage of 250V and a continuous collector current rating of 16A, this transistor is suitable for power amplification and switching applications. It operates at a frequency of up to 4MHz and can dissipate up to 200W of power. Packaged in a TO-3P-3L through-hole configuration, it offers robust thermal performance and ease of mounting in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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