MURS160J
Tillverkare
WEEN
Datablad
Datablad
Specifikation
Specifikation
DIODE GEN PURP 600V 1A SMAE
DIODE GEN PURP 600V 1A SMAE
Detaljerad specifikation
Detaljerad specifikation
Diode 600 V 1A ytmonterad SMAE
Diode 600 V 1A ytmonterad SMAE
Beskrivning (eng)
Beskrivning (eng)
The MURS160J is an ultrafast power diode with a maximum repetitive peak reverse voltage of 600 V and an average forward current rating of 1 A. It features a low forward voltage drop, low leakage current, and soft recovery characteristics, making it suitable for high-frequency applications. The diode is housed in a surface mount SMA package, ensuring efficient thermal management and fast switching capabilities.
The MURS160J is an ultrafast power diode with a maximum repetitive peak reverse voltage of 600 V and an average forward current rating of 1 A. It features a low forward voltage drop, low leakage current, and soft recovery characteristics, making it suitable for high-frequency applications. The diode is housed in a surface mount SMA package, ensuring efficient thermal management and fast switching capabilities.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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