MT3S111(TE85L,F)
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
RF TRANS NPN 6V 11.5GHZ SMINI
RF TRANS NPN 6V 11.5GHZ SMINI
Detaljerad specifikation
Detaljerad specifikation
RF Transistor NPN 6V 100mA 11.5GHz 700mW Ytmonterad S-Mini
RF Transistor NPN 6V 100mA 11.5GHz 700mW Ytmonterad S-Mini
Beskrivning (eng)
Beskrivning (eng)
The MT3S111 is a Silicon-Germanium NPN RF transistor designed for low-noise, low-distortion amplifier applications. It operates at a collector-emitter voltage of 6V, with a maximum collector current of 100mA and a power dissipation of 700mW. The device features a low noise figure of 0.9 dB at 1 GHz and a transition frequency of 11.5 GHz, making it suitable for VHF-UHF applications.
The MT3S111 is a Silicon-Germanium NPN RF transistor designed for low-noise, low-distortion amplifier applications. It operates at a collector-emitter voltage of 6V, with a maximum collector current of 100mA and a power dissipation of 700mW. The device features a low noise figure of 0.9 dB at 1 GHz and a transition frequency of 11.5 GHz, making it suitable for VHF-UHF applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Gabriella eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K