MR0A16AYS35R
Tillverkare
NXP
Specifikation
Specifikation
IC RAM 1MBIT PARALLEL 44TSOP II
IC RAM 1MBIT PARALLEL 44TSOP II
Detaljerad specifikation
Detaljerad specifikation
MRAM (Magnetoresistiv RAM) Minne IC 1Mbit Parallell 35 ns 44-TSOP II
MRAM (Magnetoresistiv RAM) Minne IC 1Mbit Parallell 35 ns 44-TSOP II
Beskrivning (eng)
Beskrivning (eng)
The MR0A16AYS35R from NXP USA Inc. is a 1Mbit Magnetoresistive RAM (MRAM) memory integrated circuit designed for parallel data access. It operates with a speed of 35 ns and is housed in a 44-pin TSOP II package, making it suitable for space-constrained applications. This memory solution combines the non-volatility of Flash with the speed of SRAM, providing a reliable and efficient option for various electronic systems. Its architecture allows for easy integration into existing designs, enhancing performance in data storage and retrieval tasks.
The MR0A16AYS35R from NXP USA Inc. is a 1Mbit Magnetoresistive RAM (MRAM) memory integrated circuit designed for parallel data access. It operates with a speed of 35 ns and is housed in a 44-pin TSOP II package, making it suitable for space-constrained applications. This memory solution combines the non-volatility of Flash with the speed of SRAM, providing a reliable and efficient option for various electronic systems. Its architecture allows for easy integration into existing designs, enhancing performance in data storage and retrieval tasks.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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