MMBTA42-QR
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 300V 0.1A TO236AB
TRANS NPN 300V 0.1A TO236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 300 V 100 mA 50 MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor NPN 300 V 100 mA 50 MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The MMBTA42-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 300 V, a collector current of 100 mA, and a power dissipation of 250 mW. This device operates at frequencies up to 50 MHz, making it suitable for various communication applications.
The MMBTA42-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 300 V, a collector current of 100 mA, and a power dissipation of 250 mW. This device operates at frequencies up to 50 MHz, making it suitable for various communication applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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