MMBT3904
Tillverkare
ANBON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
200MA SILICON NPN EPITAXIAL PLAN
200MA SILICON NPN EPITAXIAL PLAN
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 40 V 200 mA 250MHz 300 mW ytmonterad SOT-23
Bipolär (BJT) Transistor NPN 40 V 200 mA 250MHz 300 mW ytmonterad SOT-23
Beskrivning (eng)
Beskrivning (eng)
The MMBT3904 is a silicon NPN epitaxial planar bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 200 mA, a collector-emitter voltage rating of 40 V, and a transition frequency of 250 MHz, making it suitable for high-speed applications. The device is housed in a compact SOT-23 surface mount package, ensuring efficient use of board space while providing reliable performance in various electronic circuits.
The MMBT3904 is a silicon NPN epitaxial planar bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 200 mA, a collector-emitter voltage rating of 40 V, and a transition frequency of 250 MHz, making it suitable for high-speed applications. The device is housed in a compact SOT-23 surface mount package, ensuring efficient use of board space while providing reliable performance in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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