MMBT2907A
Tillverkare
ANBON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
GENERAL PURPOSE PNP TRANSISTOR
GENERAL PURPOSE PNP TRANSISTOR
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 800 mA 200MHz 350 mW ytmonterad SOT-23-3L
Bipolär (BJT) Transistor PNP 60 V 800 mA 200MHz 350 mW ytmonterad SOT-23-3L
Beskrivning (eng)
Beskrivning (eng)
The MMBT2907A is a general-purpose PNP bipolar junction transistor (BJT) designed for a variety of applications. It features a maximum collector-emitter voltage of 60 V and can handle a collector current of up to 800 mA, making it suitable for medium power switching and amplification tasks. With a transition frequency of 200 MHz and a power dissipation of 350 mW, this surface-mounted device is housed in a compact SOT-23-3L package, ensuring efficient thermal management and space-saving design in electronic circuits.
The MMBT2907A is a general-purpose PNP bipolar junction transistor (BJT) designed for a variety of applications. It features a maximum collector-emitter voltage of 60 V and can handle a collector current of up to 800 mA, making it suitable for medium power switching and amplification tasks. With a transition frequency of 200 MHz and a power dissipation of 350 mW, this surface-mounted device is housed in a compact SOT-23-3L package, ensuring efficient thermal management and space-saving design in electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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