MJD42C-QJ
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 100V 6A DPAK
TRANS PNP 100V 6A DPAK
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 100 V 6 A 3 MHz 1.6 W ytmonterad DPAK
Bipolar (BJT) Transistor PNP 100 V 6 A 3 MHz 1.6 W ytmonterad DPAK
Beskrivning (eng)
Beskrivning (eng)
The MJD42C-Q is a high power PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 6 A, and a power dissipation capability of 1.6 W. With fast switching speeds and low saturation voltage, it is suitable for various power management applications.
The MJD42C-Q is a high power PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 6 A, and a power dissipation capability of 1.6 W. With fast switching speeds and low saturation voltage, it is suitable for various power management applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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