MJD41C-QJ
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 100V 10A DPAK
TRANS NPN 100V 10A DPAK
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 100 V 10 A 3 MHz 1.6 W ytmonterad DPAK
Bipolär (BJT) Transistor NPN 100 V 10 A 3 MHz 1.6 W ytmonterad DPAK
Beskrivning (eng)
Beskrivning (eng)
The MJD41C-QJ is a high power NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V and a peak collector current of 10 A. With a power dissipation capability of 1.6 W and fast switching speeds, it is suitable for various power management applications, including load switching and motor drives.
The MJD41C-QJ is a high power NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V and a peak collector current of 10 A. With a power dissipation capability of 1.6 W and fast switching speeds, it is suitable for various power management applications, including load switching and motor drives.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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