MJD31CJ
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 100V 3A DPAK
TRANS NPN 100V 3A DPAK
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 100 V 3 A 3MHz 1.6 W ytmonterad DPAK
Bipolär (BJT) Transistor NPN 100 V 3 A 3MHz 1.6 W ytmonterad DPAK
Beskrivning (eng)
Beskrivning (eng)
The MJD31CJ is a high power NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 3 A, and a total power dissipation of 1.6 W. This device operates efficiently at switching speeds up to 3 MHz, making it suitable for various power management applications.
The MJD31CJ is a high power NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 3 A, and a total power dissipation of 1.6 W. This device operates efficiently at switching speeds up to 3 MHz, making it suitable for various power management applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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