MJD31CH-QJ
Tillverkare
NEXPERIA
Specifikation
Specifikation
BJT - MJD SERIES
BJT - MJD SERIES
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 100 V 3 A 3MHz 1.6 W Ytmonterad DPAK
Bipolär (BJT) Transistor NPN 100 V 3 A 3MHz 1.6 W Ytmonterad DPAK
Beskrivning (eng)
Beskrivning (eng)
The MJD31CH-QJ from Nexperia USA Inc. is a high-performance NPN bipolar junction transistor (BJT) designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 3 A, making it suitable for various power switching applications. With a transition frequency of 3 MHz and a power dissipation capability of 1.6 W, this transistor is ideal for use in amplifiers and signal processing circuits. Its DPAK package ensures efficient thermal management and ease of integration into compact designs.
The MJD31CH-QJ from Nexperia USA Inc. is a high-performance NPN bipolar junction transistor (BJT) designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 3 A, making it suitable for various power switching applications. With a transition frequency of 3 MHz and a power dissipation capability of 1.6 W, this transistor is ideal for use in amplifiers and signal processing circuits. Its DPAK package ensures efficient thermal management and ease of integration into compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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