MB85R256FPFCN-G-BNDE1
Tillverkare
FUJITSU
Datablad
Datablad
Specifikation
Specifikation
IC FRAM 256KBIT PAR 28TSOP I
IC FRAM 256KBIT PAR 28TSOP I
Detaljerad specifikation
Detaljerad specifikation
FRAM (ferroelectric RAM) minnes-IC 256Kbit parallell 150 ns 28-TSOP I
FRAM (ferroelectric RAM) minnes-IC 256Kbit parallell 150 ns 28-TSOP I
Beskrivning (eng)
Beskrivning (eng)
The MB85R256FPFCN-G-BNDE1 is a 256Kbit Ferroelectric RAM (FRAM) memory integrated circuit (IC) from Fujitsu Semiconductor Memory Solution. This memory IC operates in parallel mode with a fast access time of 150 ns, making it suitable for high-speed applications. It is housed in a 28-pin TSOP I package, ensuring a compact design for space-constrained environments. FRAM technology provides non-volatile memory with high endurance and low power consumption, ideal for applications requiring frequent write cycles and data retention without power.
The MB85R256FPFCN-G-BNDE1 is a 256Kbit Ferroelectric RAM (FRAM) memory integrated circuit (IC) from Fujitsu Semiconductor Memory Solution. This memory IC operates in parallel mode with a fast access time of 150 ns, making it suitable for high-speed applications. It is housed in a 28-pin TSOP I package, ensuring a compact design for space-constrained environments. FRAM technology provides non-volatile memory with high endurance and low power consumption, ideal for applications requiring frequent write cycles and data retention without power.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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