MB85R1001ANC-GE1
Tillverkare
FUJITSU
Datablad
Datablad
Specifikation
Specifikation
IC FRAM 1MBIT PARALLEL 48TSOP
IC FRAM 1MBIT PARALLEL 48TSOP
Detaljerad specifikation
Detaljerad specifikation
FRAM (Ferroelectric RAM) Minne IC 1Mbit Parallell 150 ns 48-TSOP
FRAM (Ferroelectric RAM) Minne IC 1Mbit Parallell 150 ns 48-TSOP
Beskrivning (eng)
Beskrivning (eng)
The MB85R1001ANC-GE1 is a 1Mbit FRAM (Ferroelectric RAM) memory IC featuring a parallel interface and a read/write endurance of 10^10 cycles. It operates at a supply voltage of 3.0 V to 3.6 V and supports a read/write cycle time of 150 ns. The device is housed in a 48-pin TSOP package and is suitable for applications requiring nonvolatile memory without a backup battery.
The MB85R1001ANC-GE1 is a 1Mbit FRAM (Ferroelectric RAM) memory IC featuring a parallel interface and a read/write endurance of 10^10 cycles. It operates at a supply voltage of 3.0 V to 3.6 V and supports a read/write cycle time of 150 ns. The device is housed in a 48-pin TSOP package and is suitable for applications requiring nonvolatile memory without a backup battery.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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