KSE13003H2ASTU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 400V 1.5A TO126-3
TRANS NPN 400V 1.5A TO126-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 400 V 1,5 A 4 MHz 20 W Genomgående hål TO-126-3
Bipolär (BJT) Transistor NPN 400 V 1,5 A 4 MHz 20 W Genomgående hål TO-126-3
Beskrivning (eng)
Beskrivning (eng)
The KSE13003H2ASTU is a high-voltage NPN bipolar junction transistor (BJT) designed for switching applications. It features a collector-emitter voltage rating of 400 V, a collector current of 1.5 A, and a power dissipation of 20 W. With a current gain bandwidth product of 4 MHz, it is suitable for high-speed switching in various applications.
The KSE13003H2ASTU is a high-voltage NPN bipolar junction transistor (BJT) designed for switching applications. It features a collector-emitter voltage rating of 400 V, a collector current of 1.5 A, and a power dissipation of 20 W. With a current gain bandwidth product of 4 MHz, it is suitable for high-speed switching in various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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