KSD1616AGTA
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 60V 1A TO92-3
TRANS NPN 60V 1A TO92-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 60 V 1 A 160 MHz 750 mW Genomgående hål TO-92-3
Bipolär (BJT) Transistor NPN 60 V 1 A 160 MHz 750 mW Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The KSD1616AGTA from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates at a maximum collector-emitter voltage of 60V and can handle a collector current of up to 1A, making it suitable for power amplification and switching applications. With a transition frequency of 160MHz and a power dissipation capability of 750mW, this TO-92-3 package transistor is ideal for use in low to medium power circuits, ensuring reliable performance in compact designs.
The KSD1616AGTA from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates at a maximum collector-emitter voltage of 60V and can handle a collector current of up to 1A, making it suitable for power amplification and switching applications. With a transition frequency of 160MHz and a power dissipation capability of 750mW, this TO-92-3 package transistor is ideal for use in low to medium power circuits, ensuring reliable performance in compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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