KSD1616AGBU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 60V 1A TO92-3
TRANS NPN 60V 1A TO92-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Genomgående hål TO-92-3
Bipolär (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The KSD1616AGBU is a NPN bipolar junction transistor designed for audio frequency power amplification and medium-speed switching applications. It features a collector-emitter voltage rating of 60 V, a collector current of 1 A, and a current gain bandwidth product of 160 MHz. The device is housed in a TO-92-3 package and is Pb-free.
The KSD1616AGBU is a NPN bipolar junction transistor designed for audio frequency power amplification and medium-speed switching applications. It features a collector-emitter voltage rating of 60 V, a collector current of 1 A, and a current gain bandwidth product of 160 MHz. The device is housed in a TO-92-3 package and is Pb-free.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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