KSC5502DTM
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 600V 2A TO252AA
TRANS NPN 600V 2A TO252AA
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 600 V 2 A 11 MHz 50 W ytmonterad TO-252AA
Bipolär (BJT) Transistor NPN 600 V 2 A 11 MHz 50 W ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The KSC5502DTM is a high-performance NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 600 V, a collector current of 2 A, and a current gain bandwidth product of 11 MHz. The device is housed in a TO-252AA surface mount package, making it suitable for compact designs. With a built-in free-wheeling diode and a wide safe operating area, it is ideal for electronic ballast applications and other high-voltage switching tasks.
The KSC5502DTM is a high-performance NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 600 V, a collector current of 2 A, and a current gain bandwidth product of 11 MHz. The device is housed in a TO-252AA surface mount package, making it suitable for compact designs. With a built-in free-wheeling diode and a wide safe operating area, it is ideal for electronic ballast applications and other high-voltage switching tasks.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Patrick eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K