KSC5026MOS
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 800V 1.5A TO126-3
TRANS NPN 800V 1.5A TO126-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 800 V 1,5 A 15 MHz 20 W Genomgående hål TO-126-3
Bipolär (BJT) Transistor NPN 800 V 1,5 A 15 MHz 20 W Genomgående hål TO-126-3
Beskrivning (eng)
Beskrivning (eng)
The KSC5026MOS is a high-voltage NPN bipolar transistor designed for applications requiring high reliability and fast switching. It features a collector-emitter voltage of 800 V, a collector current of 1.5 A, and a power dissipation of 20 W. This TO-126-3 package transistor operates effectively at frequencies up to 15 MHz, making it suitable for various electronic applications.
The KSC5026MOS is a high-voltage NPN bipolar transistor designed for applications requiring high reliability and fast switching. It features a collector-emitter voltage of 800 V, a collector current of 1.5 A, and a power dissipation of 20 W. This TO-126-3 package transistor operates effectively at frequencies up to 15 MHz, making it suitable for various electronic applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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