KSB1366GTU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 60V 3A TO220F-3
TRANS PNP 60V 3A TO220F-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 3 A 9 MHz 2 W Genomgående hål TO-220F-3
Bipolär (BJT) Transistor PNP 60 V 3 A 9 MHz 2 W Genomgående hål TO-220F-3
Beskrivning (eng)
Beskrivning (eng)
The KSB1366GTU is a PNP bipolar junction transistor designed for low-frequency power amplification applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 3 A, and a power dissipation capability of 2 W. The device operates at a frequency of up to 9 MHz and is housed in a TO-220F-3 package, making it suitable for through-hole mounting in various electronic circuits.
The KSB1366GTU is a PNP bipolar junction transistor designed for low-frequency power amplification applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 3 A, and a power dissipation capability of 2 W. The device operates at a frequency of up to 9 MHz and is housed in a TO-220F-3 package, making it suitable for through-hole mounting in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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