KSB1151YS
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
POWER BIPOLAR TRANSISTOR, 5A, 60
POWER BIPOLAR TRANSISTOR, 5A, 60
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 5 A 1.3 W Genomgående hål TO-126-3
Bipolär (BJT) Transistor PNP 60 V 5 A 1.3 W Genomgående hål TO-126-3
Beskrivning (eng)
Beskrivning (eng)
The KSB1151YS is a high-performance PNP bipolar junction transistor (BJT) designed for power applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 60 V, making it suitable for various switching and amplification tasks. With a power dissipation capability of 1.3 W, this transistor is housed in a TO-126-3 through-hole package, ensuring ease of integration into electronic circuits. Its robust design allows for reliable operation in demanding environments, making it ideal for power management solutions.
The KSB1151YS is a high-performance PNP bipolar junction transistor (BJT) designed for power applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 60 V, making it suitable for various switching and amplification tasks. With a power dissipation capability of 1.3 W, this transistor is housed in a TO-126-3 through-hole package, ensuring ease of integration into electronic circuits. Its robust design allows for reliable operation in demanding environments, making it ideal for power management solutions.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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