KSB1015YTU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 60V 3A TO220F-3
TRANS PNP 60V 3A TO220F-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 3 A 9 MHz 25 W Genomgående hål TO-220F-3
Bipolär (BJT) Transistor PNP 60 V 3 A 9 MHz 25 W Genomgående hål TO-220F-3
Beskrivning (eng)
Beskrivning (eng)
The KSB1015YTU is a PNP bipolar junction transistor designed for low frequency power amplification. It features a maximum collector-emitter voltage of 60V, a collector current rating of 3A, and a power dissipation capability of 25W. The device operates with a current gain bandwidth product of 9MHz and has low collector-emitter saturation voltage, making it suitable for various applications.
The KSB1015YTU is a PNP bipolar junction transistor designed for low frequency power amplification. It features a maximum collector-emitter voltage of 60V, a collector current rating of 3A, and a power dissipation capability of 25W. The device operates with a current gain bandwidth product of 9MHz and has low collector-emitter saturation voltage, making it suitable for various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Marcus eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K